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Low-resistance lateral pin junctions for LDs on III-V CMOS photonics platform are obtained using Si implantation and Zn diffusion owing to high thermal tolerance of III-V-OI wafer, resulting in observing electro-luminescence from Inga Asp photonic-wire waveguides.
We have found that a Ni-InGaAs alloy is promising material for the self-aligned metal source/drain (S/D) of InGaAs MOSFETs. The Ni-InGaAs alloy has a low sheet resistance of around 25 Ω/square and a low Schottky barrier height (SBH) for n-InGaAs. We also introduce the SBH engineering by modulating the In content in InxGa1-xAs. The value of SBH is reduced with increasing the In content with maintaining...
In this study, we examine metal materials suitable for InP metal S/D n-MOSFETs through electrical characteristics of metal/InP diodes. As a result of the diode characteristics, we demonstrate successful fabrication and operation of metal S/D MOSFETs on InP substrates, for the first time.
We have successfully fabricated uniaxially strained SOI FinFETs with high electron mobility and low parasitic resistance. The electron mobility on (110) sidewall surfaces was found to surpass the (100) universal mobility by the subband engineering through uniaxial tensile strain along <110>. Thanks to this high electron mobility enhancement and the relatively low parasitic resistance, high I...
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