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Ge photodetectors and Ge MOSFETs were integrated on Ge-on-Insulator substrate by using oxidation condensation technique. The responsivity of photodetectors up to 1575 nm and excellent switching of MOSFETs were demonstrated.
Temperature dependence of hole mobility in Ge-rich strained SiGe-on-insulator (SGOI) pMOSFETs was investigated up to 473 K in order to examine the advantage in mobility at temperatures in operating very-large-scale-integrated circuit (VLSI) devices, which are significantly higher than room temperature. High-temperature operation and hole-mobility enhancements are demonstrated up to 473 K for the SGOI-pMOSFETs,...
SiGe on insulator (SGOI) is a typical template substrate for strained Si-on-insulator (SOI) structures, which can enjoy both benefits of the mobility enhancement by strained channels and the low junction capacitance by SOI structures. In order to fabricate the high performance MOSFET, formation of the highly strained Si layers on SGOI without dislocations and defects is quite important. This means...
An ultra-thin body (UTB) Ge-on-insulator (GOI) MISFET is one of the promising candidates for the future devices structure. For fabrication of UTB GOI devices, we have fabricated an ultra-thin GOI layer by oxidizing a SiGe layer grown on an SOI layer, which is called the Ge-condensation technique, However, the GOI devices on substrates fabricated by Ge condensation exhibited large off current which...
Strained SOI-MOSFETs are promising device structures for high-performance CMOS applications, because of their high current drive and low parasitic capacitances. It has been demonstrated that uniform 150 and 200mm strained-Si/SGOI (SiGe-on-insulator) wafers with the ULSI grade have been successfully fabricated by the Ge condensation process to realize excellent device performances even for 35nm-gate-length...
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