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The significant thermal stability improvement induced by laser annealing (LA) is demonstrated for 50-Å Ni(Pt) film silicidation. For the first time, it is revealed that LA may induce less stress in ultrathin Ni(Pt)Si film during silicidation, which can directly improve the thermal stability of the film. The local area annealing model is proposed to discuss the origin of stress relief. Besides, it...
The unusual dependence of ultrathin Ni(Pt)Si film formation induced by laser annealing (LA) on thermal budget is demonstrated. It is revealed that a higher thermal budget is required for thinner as-deposited Ni(Pt) film silicidation due to the poorer absorption of laser energy. Besides, compared with conventional RTP, LA can also effectively improve the thermal stability of the ultrathin Ni(Pt)Si...
Nickel silicide formation on Si(110) substrate is investigated in this paper. Comparing with the samples fabricated on Si(100) substrate, it is revealed that a higher annealing temperature is required for NiSi formation on Si(110) substrate. X-ray diffraction and atomic force microscopy were employed for further material analysis. NiSi/Si(110) Schottky contacts were also fabricated for electrical...
Fiber Bragg grating (FBG) sensors have great potential for measuring temperature or strain and even detecting fractures in metal materials. The use of metal coatings is one of the most efficient methods for protecting FBG sensors. This article describes a new type of etchless duplex metal coating especially developed for FBG for sensing purposes. Copper was chosen as the conductive layer for deposition...
The solid-state reaction of Ni/Si in the presence of other elements is investigated. The alloying effects on both NiSi/Si Schottky contacts and Ni fully silicided (FUSI) gates on SiO2 dielectric are studied by phase, composition, and electrical characterization tools. The results show that after silicidation Er, Y, and Al all segregated at the Ni-silicide surface rather than piled up at the Ni-silicide/Si...
The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ru/TaN barrier stack were investigated. Four point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The results show that the Ru(14 nm)/TaN(15 nm) stack can be both thermally...
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