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We report that the bandgap of 2D few layer black phosphorus (BP) can be electrically tuned by applying a perpendicular electric/displacement field. The variation of bandgap is as large as 200 meV with 2V/nm displacement field. The bandgap modulation can be understood with the quantum confined stark effect within the SiO2/BP/boron nitride (BN) sandwiched structure. This unique material property provides...
In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate the device, a self-consistent Non-Equilibrium Green's Function (NEGF) solver has been developed and validated against published experimental data. Using the simulator,...
Recent advances in fabricating, measuring, and modeling of top-gated graphene FETs for high-frequency electronics are reviewed. By improving the oxide deposition process and reducing series resistance, an intrinsic cut-off frequency as high as 50 GHz is achieved in a 350-nm-gate graphene FET at a drain bias of 0.8 V. This fT value is the highest frequency reported to date for any graphene transistor,...
Graphene and carbon nanotube based photonic devices, including light emitters and high bandwidth photodetectors are demonstrated. The potential of these truly nanometer scale, 2-dimensional (graphene) and quasi 1-dimensional (nanotube) carbon materials in photonics are discussed.
In this paper, we present a new approach for making active carbon nanotube (CNT) electrical devices and demonstrate the first aligned CNT array field effect transistors (FET) from 99% pure separated semiconducting nanotubes. Through evaporation-driven deposition of predominantly semiconducting nanotubes from the liquid phase, we have fabricated aligned, thin-film CNT devices with high on-state currents...
We have integrated an electrically excited light emitter using a single SWCT with a planar photonic lambda/2-cavity. The spectral width of cavity-controlled emission is 7 times narrower than the free-space emission from the same SWCT.
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