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A decade bandwidth 90 W, GaN HEMT push-pull power amplifier has been demonstrated. The power amplifier exhibits 18 dB small-signal gain with 20-1100 MHz 3-dB bandwidth and obtains 82.2-107.5 W CW output power with 51.9-73.8 % drain efficiency and 15.2-16.3 dB power gain over the 100-1000 MHz band. The push-pull power amplifier occupies a 2 x 2 inch PCB area and uses a novel compact broadband low loss...
We have demonstrated a 0.1-1.8 GHz, 100 W GaN HEMT power amplifier module with 11 dB gain, 94-142 W CW output power and 40.6-74.0% drain efficiency over the band. The power amplifier module uses broadband low loss coaxial baluns to combine four 30 W broadband lossy matched GaN HEMT PAs on a 2 × 2 inch compact PCB. The individual PAs are fully matched to 50 Ohms and obtains 23.6-30.9 W with 44.5-63...
We have demonstrated a decade bandwidth 100 W GaN HEMT power amplifier module with 15.5–18.6 dB gain, 104–121 W CW output power and 61.4–76.6 % drain efficiency over the 100–1000 MHz band. The 2 × 2 inch compact power amplifier module combines four 30 W lossy matched broadband GaN HEMT PAs packaged in a ceramic SO8 package. Each of the 4 devices is fully matched to 50 Ω and obtains 30.8–35.7 W with...
We have demonstrated a decade bandwidth 100 W GaN HEMT power amplifier module with 15.5-18.6 dB gain, 104-121 W CW output power and 61.4-76.6% drain efficiency over the 100-1000 MHz band. The 2 × 2 inch compact power amplifier module combines four 30 W lossy matched broadband GaN HEMT PAs packaged in a ceramic SO8 package. Each of the 4 devices is fully matched to 50 Ohms and obtains 30.8-35.7 W with...
Compact S Band (2.2GHz to 2.8GHz and 2.8GHz to 3.2GHz) two stage power amplifiers are demonstrated using gallium nitride and gallium arsenide semiconductor technologies. The amplifier provides 83W to 105W of peak output power with peak power added efficiency of 42% to 51% over a 24% bandwidth. Small signal gain is 21dB to 24dB over this frequency band. The circuit design integrates matching networks...
We report a broadband lossy matched GaN on SiC HEMT power amplifier MMIC with 15 dB gain, 0.5-2.5 GHz bandwidth, 9-13.6 W CW output power and 44.9-63.6% drain efficiency over the band. The amplifier operates from a 48 V drain supply and is packaged in a ceramic S08 package. These amplifiers are intended for use in wideband digital communication applications.
Next generation commercial and military systems require high power amplifiers (HPAs) with superior performance such as higher efficiency, improved thermal performance, wider bandwidth and higher output power. Using an optimized 0.5 um, 48 V GaN-on-SiC process, a family of GaN power amplifiers are developed for applications in the frequency range of 30 MHz to 4 GHz and output power ranging from 8 W...
We have demonstrated a RLC matched GaN HEMT power amplifier with 12 dB gain, 0.05-2.0 GHz bandwidth, 8 W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic S08 package and contains a GaN on SiC device operating at 28 V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit designed for 48 V operation and 15 W CW power...
We have developed 400 W pulsed output power GaN HEMT amplifiers with 2.9 – 3.5 GHz bandwidth. Operating the amplifier from a 65 V drain supply under pulsed operation with 10% duty cycle and 100μs pulse width obtains an output power in the range of 401 – 446 W over the band with a drain efficiency of 48 – 55%. The amplifier uses AlGaN/GaN HEMTs with a total device periphery of 44.4 mm and advanced...
Gallium nitride based HEMTs are a promising technology for high voltage, high power, high frequency applications. In addition to the potential for high operating voltage, this technology may also be suited for applications that utilize modulation of the drain voltage to improve overall amplifier efficiency. RFMD has developed a GaN HEMT technology platform on semi-insulating SiC substrates. This technology...
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