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Processing-in-memory (PIM) provides high bandwidth, massive parallelism, and high energy efficiency by implementing computations in main memory, therefore eliminating the overhead of data movement between CPU and memory. While most of the recent work focused on PIM in DRAM memory with 3D die-stacking technology, we propose to leverage the unique features of emerging non-volatile memory (NVM), such...
Resistive Random Access Memory (ReRAM) has several advantages over current NAND Flash technology, highlighting orders of magnitude lower access latency and higher endurance. Recently proposed 3D vertical cross-point ReRAM (3D-VRAM) architecture is an encouraging development in ReRAM's evolution as a cost-competitive solution, and thus attracts a lot of attention in both industry and academia. In this...
High reliability, availability, and serviceability are critical for modern large-scale computing systems. As an effective error recovery mechanism, checkpointing has been widely used in such systems for their survival from unexpected failures. The conventional checkpointing schemes, however, are time-consuming due to the limited I/O bandwidth between the DRAM-based main memory and the backup storage...
With attractive advantages like high density and low leakage, Spin-Transfer Torque Magnetoresistive RAM (STT-MRAM) is a promising candidate to replace conventional SRAM technology to build large-size and low-power on-chip caches. Multi-level cell (MLC) STT-MRAM, with a higher density, further improves the on-chip cache capacity for chip multiprocessor (CMP) systems. However, the notorious high write...
Resistive Random Access Memory (ReRAM) is one of the most promising emerging memory technologies as a potential replacement for DRAM memory and/or NAND Flash. Multi-level cell (MLC) ReRAM, which can store multiple bits in a single ReRAM cell, can further improve density and reduce cost-per-bit, and therefore has recently been investigated extensively. However, the majority of the prior studies on...
As a kind of on-line measurement technology possessing advantages of unperturbed, non-radiant and visualization, Electrical Resistance Tomography has wide application prospect in petroleum and chemical industrial production processes which are based continuous-phase conductive medium. For extracting information of the production processes efficiently, a kind of 16 electrodes ERT system based the industrial...
Emerging non-volatile memory (NVM) technologies are getting mature in recent years. These emerging NVM technologies have demonstrated great potentials for the universal memory hierarchy design. Among all the technology candidates, resistive random-access memory (RRAM) is considered to be the most promising as it operates faster than phase-change memory (PCRAM), and it has simpler and smaller cell...
The memristor, known as the fourth basic two-terminal circuit element, has attracted many research interests since the first real device was developed by HP labs in 2008. The nano-scale memristive device has the potential to construct some novel computing systems because of its distinctive characters, such as non-volatility, non-linearity, low-power, and good scalability. These electrical characteristics...
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