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L10-FePt film has the high magnetocystalline anisotropy energy (Ku), large coercivity (HC) and it is an ideal high density magnetic recording material. However, L10-FePt ordered phase is obtained by high temperature annealing, which is prone to increase the grain size of FePt. The large size grains cause the surface roughness increase, which is the source of the noise during the recording process...
The dielectric breakdown field (EBD) and the time-dependent-dielectric-breakdown (TDDB) of eight different low-K films with porosities between 3% (K=3.2) and 50% (K=1.8) and thicknesses between 15 and 60 nm were investigated using imec's planar capacitors (p-cap) test vehicle. EBD values decrease linearly with porosity to reach 6MV/cm at 50% porosity. The analogous Organo-Silicate Glass (OSG) films...
In-Ga-Zn oxide (IGZO) TFTs was fabricated by ink-jet printing technology on a silicon substrate with SiO2 on top. The device fabrication process includes printing ITO electrodes and IGZO semiconductor layer. A typical printed TFT shows a mobility of 0.32 cm2/V s and a contact resistance of ∼1 MΩ. Device performance was further improved by inserting an IZO layer between the source/drain electrode and...
The time dependent dielectric breakdown (TDDB) of four organo-silicate-glass (OSG) films with varying porosity (k=2.0, 2.5, 2.8 & 3.0) was investigated using metal-insulator-semiconductor (MIS) capacitors. Without any barrier, the dielectrics show lower TDDB-lifetimes under Cu ion drift conditions, where the OSG-2.8-film exhibits a better performance. Other results are that the damage caused by...
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