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InAs/InGaAs quantum dot mode-locked lasers are fabricated and characterized. The modal gain as the saturable absorber voltage (SAV) changes is investigated. The ground state lasing dominates at low SAV, and excited state transition emerges when SAV increases.
Temperature (20–100 °C) and excitation power (10–700 mW)-dependent photoluminescence (PL) measurements have been carried out on the 1.3 μm GaAs-based InAs quantum dot (QD) laser structures. Rate equation was used to interpret the PL behavior of the QD. The exciton behavior of the carriers in InAs QD has been verified. The excitonic modal gain has been calculated (under exciton picture) and compared...
Recent studies on 1.3 mum InGaAs/GaAs QD-SOAs show they are able to deliver >18 dB gain across a 20 to 70degC temperature range. Successful system demonstrations over temperature are reported at channel rates of 10 Gb/s.
1.3 mum QD SOAs are shown to provide 19 dB optical gain at temperatures up to 70 degC, allowing < 0.1 dB system penalty at 10 Gb/s. The gain is constant to within plusmn 3.5 dB from 20degC-70degC for 10 nm spectral bandwidth.
This paper highlights the potential of an integrated 2times2 quantum dot switch for uncooled switching applications. High gain of 11.6 dB and <0.6 dB power penalty over lldB dynamic range is demonstrated at temperatures up to 70degC.
The performance of an integrated quantum dot switch, exhibiting on-chip gain in excess of 15 dB and saturation powers in excess of 12 dBm for both through and cross configurations, is presented. The device allows for the processing of picosecond pulses generated by a QD mode-locked
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