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Novel 3-kV 4H-SiC reverse blocking (RB) metal–oxide–semiconductor field-effect transistors (MOSFETs) have been demonstrated for high-voltage bidirectional switching applications. To achieve RB capability, a series Schottky barrier diode structure was introduced onto the backside of the 4H-SiC MOSFET. The developed SiC RB MOSFET exhibits bidirectional blocking voltage over 3 kV and a differential specific...
The authors developed 3 kV 4H-SÍC reverse blocking (RB) metal-oxide-semiconductor field-effect transistors (MOSFETs) for the first time. To achieve reverse blocking capability, the n+-substrate layer was removed by polishing, and both a Schottky contact and edge-termination structure were introduced onto the wafer backside. Fabricated SiC RB MOSFETs exhibited good Schottky characteristics, and measured...
This paper discusses the development of 5-watts-class flyback converter which can operate at switching frequencies from 1 to 16 MHz. In order to analyze fast switching operations, the input and output voltages with currents are measured for estimating the converter. The self-induced soft switching operation is experimentally investigated at a ringing frequency caused by parasitic components, including...
SiC Power devices are expected to greatly improve the efficiencies and operating capabilities of next generation electric and hybrid electric vehicles. The use of these devices allows for drastic size and weight reduction at the module and system levels of motor drives used in automotive applications. A new SiC MOSFET structure with both gate and source trenches is presented. This greatly reduces...
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