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In this work, tantalum oxide (TaOJ based ring contact Resistive Random Access Memory (RRAM) devices with varying TaOx thicknesses (5, 10 and 15 nm) were demonstrated and evaluated. TaOx layers were deposited using atomic layer deposition and were in contact with a Platinum (Pt) top electrode and Tantalum (Ta) sidewall electrode. RRAM devices with different TaOx thickness were compared to investigate...
New clathrate‐based phase‐change materials with cage‐like structures incorporating Cs and Ba guest atoms, are reported as a means of altering crystallization and amorphization behavior by controlling ‘guest‐cage’ interactions via intra‐complex guest vibrational effects. Both a high resistance to spontaneous crystallization, and long retention of the amorphous phase are achieved, as well as a low melting...
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