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This paper presents the high frequency noise characterization of bipolar and MOSFET devices over temperature. The device noise parameter calculation based on Y-parameters is utilized to compare with the results from measurement over temperature. Based on the calculated and measured results, this paper will discuss the device model parameters which impact the temperature dependence of noise properties...
In Gas Insulated Switchgear (GIS) the loop resistance is a key parameter which can characterize the contact condition of the conductive circuit. The current method to measure loop resistance was mostly proposed and used in routine test, commissioning test and overhaul. The monitoring of abnormal conditions of contacts in operation has not been realized yet. To early detect the hidden contact defects...
This paper focuses on the thermal stability of a high performance, low-range calibration setup for differential air pressure sensors. The setup is a dual parallel chamber design with the full range of ±320 Pa, which can be translated to a temperature mismatch of only about 0.93°C between the chambers. Due to the limitations of existing temperature measurement technology, we propose a finite element...
Low range differential air pressure sensors are used widely in various applications. In this paper the effects of temperature change on transient behavior of the calibration setup for differential air pressure sensors, due to temperature gradient are analyzed. A high performance reference setup utilizing ideal gas law, for differential air pressure sensors, is selected for experimental analysis. The...
We present here wide temperature range compact modeling of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on Most EXquisite TRAnsistor Model (Mextram). Various modifications and extensions are made to enable modeling of DC characteristics from 43-393 K, and AC characteristics from 93-393 K.
The RF safe-operating-area of a variety of both bulk and thick-film SOI SiGe HBTs SiGe has been investigated using DC and pulsed-mode output characteristics, as well as RF gain and linearity measurements. SOI SiGe HBTs are found to suffer more from self-heating than bulk devices under DC operating conditions, as expected, due to their naturally higher thermal resistance. However, in terms of RF performance,...
In this paper RF small-signal modeling of SiGe HBTs was presented and its variation with biasing current, voltage and temperatures were discussed especially with the cryogenic temperatures. Direct extraction process and a two-step hot-after-cold optimization were successfully fitted with 1 to 35 GHz Y-parameters. The cryogenic RF circuit and equivalent circuit parameters were examined for its temperature...
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