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In this paper the influence of adding ELD barrier and capping layers in die shear strength of 3D stacked chips is discussed. Electroless NiB is used as barrier layer to prevent solder or UBM consumption and immersion Au is used as capping layer to improve the solder wettability. In this study UBM layers are Cu, Co and Ni and pure Sn is used as solder. For bonding both reflow and TCB methods are employed...
Micro-Raman spectroscopy is used to study local mechanical stress at trench-LOCOS structures. At the trench edges the stress is compressive. The local stress surrounding trench and LOCOS is highly affected when both structures are located close to each other. The stress picture obtained from both planar and cross-sectional experiments agrees very well with stress predicted by finite element calculations.
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