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Anomalous NLDMOS behavior under ESD stresses is investigated. Negative MM test results show failures at low stress voltage and local distributions of destruction spots. TCAD simulations clarified that the reverse recovery current during the MM stress causes parasitic NPN turn-on and effectively lowers the trigger voltage (Vt1).
A compact multi-band RF front-end architecture is strongly required and a multi-band RF filter bank is a key component for future mobile phones based on cognitive wireless technology. We have developed a novel CMOS-compatible process for the integration of a multi-band filter with LSI. Different modes of AlN/Si composite piezoelectric MEMS resonators, i.e. film bulk acoustic resonators (FBARs) and...
This paper describes microprobes fabricated on a thick glass substrate with narrow-pitch electrical feedthroughs for the application to the next-generation LSI burn-in test. The feedthrough glass substrate was sliced off from the block of stacked Pyrex glass substrates with thin metal lines. The pitch of the feedthroughs in one direction is defined by photolithography, and thus can be made sufficiently...
This paper describes the fabrication technology of a new MEMS-based probe card. The probe card is designed to satisfy requirements from advanced wafer-level burn-in LSI tests. The problem of thermal expansion mismatch between the probe card and LSI wafers is solved by using a LTCC (low temperature cofired ceramics) substrate with a coefficient of thermal expansion of 3.4 ppm/degC The probes are first...
This paper describes the fabrication technology of a new MEMS-based probe card. The probe card is designed to satisfy requirements from advanced wafer-level, burn-in LSI tests. The problem of thermal expansion mismatch between the probe card and LSI wafers is solved by using a LTCC (low temperature cofired ceramics) substrate with a coefficient of thermal expansion of 3.4 ppm/degC. The probes are...
GSM/DCS1800 direct-conversion transceiver IC with on-chip DC offset calibration system is fabricated on a 0.35 µm SOI BiCMOS process. The IC achieves -107.7 /-19.5 dBm (GSM) and -105.7 /-28.5 dBm (DCS) reference sensitivity and AM suppression performance, respectively, with 112 mA current and 2.8V power supply voltage on receiving mode.
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