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A new gate recess process technology has been successfully implemented in normally off GaN-based gate injection transistors, in order to improve the process stability. In this process, unlike the conventional gate recess process, the initial AlGaN barrier layer in the gate region is fully removed, and then, AlGaN is reproduced by epitaxial regrowth for the first time. By using this technology, the...
A new gate recess process technology has been implemented in normally off GaN based gate injection transistors (GITs) on Si substrate, in order to realize the process stability. In this process, compared to conventional recessed gate structure, the AlGaN barrier is fully removed in the gate region and then AlGaN is reproduced by epitaxial regrowth for the first time. By using this technology, standard...
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