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We present significant difference between the relay and air discharging methods in CDM testing. The relay discharging method can give inaccurate CDM threshold levels in IC device qualification, which is due to parasitic elements within the relay. It is shown that the air discharging is a better testing method to emulate CDM event under natural discharging condition although it has disadvantage in...
Adiabatic failures due to an initial peak voltage of VF-TLP measurements were observed at the input gate of a 40 nm CMOS technology. Moreover, a correlation was verified between the failure current of the VF-TLP measurements and failure voltage of CDM testing. Through the transient analyses by a VF-TLP system, the performance of a diode-stack was better than that of SCRs as an input protection for...
Unlike HBM and MM, CDM robustness is highly dependent on IC layout and packaging. Therefore, IC companies mimic IC IO rings on IO-TEG test chips to select the most appropriate CDM protection concepts (correlation from IO-TEG to final IC??s). This publication highlights pitfalls for this approach. Ensuring consistent substrate and Vss connections drastically improve the correlation.
This paper proposes a simulation-based soft error estimation methodology for computer systems. Accumulating soft error rates (SERs) of all memories in a computer system results in pessimistic soft error estimation. This is because memory cells are used spatially and temporally and not all soft errors in them make the computer system faulty. Our soft-error estimation methodology considers the locations...
Non-uniform current flow after Fowler-Nordheim current stress has been discussed. In a large thin oxide area, there are certain fixed spot areas which can trap electrons easily, and Fowler-Nordheim tunnel current is reduced at the spot areas. Enlargement of the stress induced leakage current due to trapped holes could happen at all spot areas with the same probability, but the spot areas are replaced...
Electromigration (EM) characteristics have been investigated in the TiN/Al-alloy/TiN systems formed with two types of high-temperature sputtered Al-alloy metallizations. The Al-alloy films were prepared with and without a Ti glue layer before Al-Si-Cu film high temperature-sputter deposition. Using the Ti glue layer, an Al-Ti-Si product layer having a resistivity of 43 /spl muspl Omega/cm, instead...
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