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In industrial applications, particularly in vacuum ultraviolet applications and low-energy electron detection systems, a periodic surface cleaning of the used photon/electron detectors is required to prevent the buildup of carbon contaminating layers [1-3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation extreme-ultraviolet (EUV) lithography and...
The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in relationship to the thermal processing used after formation of the PureB chemical-vapor-deposition layer that creates otherwise extremely ultrashallow junctions. The measured responsivity of PureB diodes is high and stable in the deep ultraviolet (UV) and vacuum UV spectral ranges,...
Ultrashallow Si p+n photodiodes fabricated in a pure-boron chemical-vapor-deposition (CVD) technology are investigated with respect to the relation between sensitivity to extreme-ultraviolet light and electrical performance (dark current and response time). The photodiodes are covered with a boron layer (B-layer diodes) which can be nanometer thin, allowing a quantum efficiency close to the theoretical...
We present a novel fully-depleted SOI CMOS technology with dielectrically-isolated polysilicon back gates, achieved by a double BOX substrate combined with dual-depth shallow trench isolation. CMOS devices down to 30nm gate length are fabricated with high-κ/metal gates. A novel isolation structure with liners is shown to achieve robust isolation between devices and back gates. Effective back gate...
Silicon-based p+n junction photodiodes have been successfully fabricated for radiation detection in the extreme ultraviolet (EUV) spectral range. The diode technology relies on the formation of a front p+ active surface region by using pure boron chemical vapor deposition (CVD), which grows delta-like B-doped layers on Si substrates. Therefore, the technique can ensure defect-free, highly-doped, and...
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