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STT-MRAM are foreseen as the best contender for DRAM replacement. STT-MRAM could also be used for SRAM applications if switching time below 1ns could be realized in a reliable way. In this study, we demonstrate that sub-ns switching with final state determined by the current polarity through the stack can be achieved in STT-MRAM cells comprising two spinpolarizing layers having orthogonal magnetic...
Advances in materials growth and characterization have, over the past ten years, made possible the investigation of basic physical processes in new “artificial” materials. These materials are artificial in the sense that the geometry and composition are controlled during growth on micrometer and nanometer length scales. This results in macroscopic behaviour that can be dramatically different from...
The combination of non-volatility, fast access time and endurance in MRAM technology paves the path toward an universal memory. Although an expanding attention is given to two-terminal Magnetic Tunnel Junctions (MTJ) based on Spin-Transfer Torque (STT) switching as the potential candidate for future memories, its reliability is significantly decreased because of the common writing/reading path. Three-terminal...
The spin-torque-driven in-plane precession mode of synthetic antiferromagnets (SAFs) is characterized by a frequency current dependence that changes its slope from negative redshift to positive blueshift upon increasing the applied magnetic field. Here, we show that the transition from redshift to blueshift is due to additional torques arising from the dynamic interlayer exchange coupling of the SAF...
This work reports sub-nanosecond precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars. This result is obtained in samples integrating a perpendicular polarizer and a tunnel junction with in-plane magnetized electrodes. We have performed statistics on time-resolved electrical measurements showing oscillations of the switching probability as a function of write voltage...
Charge- and spin-diffusion equations, taking into account spin-diffusion and spin-transfer torque, were numerically solved using a finite element method in complex noncollinear geometry. As an illustration, this approach was used to study the spin-dependent transport in a two-dimensional model giant magnetoresistance metallic pillar sandwiched between extended electrodes as is the case in magnetoresistive...
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