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This paper presents a predictive electrostatic capacitance and resistance compact model of multiple gate MOSFET with cylindrical conducting channels, taking into account parasitic effects, quantum confinement and quasi-ballistic effects. The model incorporates the dependence of channel length, gate height and width, gate-to-contact spacing, nanowire size, multiple channels, as well as 1-D ultra-narrow...
In this paper, the effects of nanowire (NW) line-edge roughness (LER) in gate-all-around (GAA) silicon nanowire MOSFETs (SNWTs) are investigated by 3-D statistical simulation in terms of both performance variation and mean value degradation. A physical model is developed for NW LER induced performance degradation in SNWTs for the first time. The results indicate large performance mean value degradations...
LFN in nSNWTs realized with top-to-down process is studied and analyzed in this paper. Correlated-mobility fluctuation model can explain the LFN behavior at low drain current, while significant noise enhancement is observed at high current region due to the impact of parasitic resistance of the ultra-narrow SDE regions in the nanowire transistors. Design optimizations to reduce the resistance impact...
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