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Chemical bonding states of doped impurities, boron (B) and arsenic (As), in silicon (Si) shallow junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). A step-by-step shallow etching and Hall effect measurements were combined with the SXPES to investigate correlation between chemical bonding state and electrical activation of the impurities, and to clarify depth profiles of concentration...
A new self-regulatory plasma doping (SRPD) technique with B2H6/helium gas plasma has been successfully developed that provide conformal doping for fins and precise controllable ultra-shallow doping for planar FET. Manufacturing level of process controllability (<1% on dose) of the new SRPD has been realized, and advantage of the SRPD has been verified with FinFETs with metal/high-k gate stack and...
Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with He plasma amorphization (He-PA) and several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized...
We measured HX-PES (Si 1s) of ultra low energy ion implantion (I/I) samples combined with Ge pre-amorphizaiton implantation (Ge-PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower binding energy...
We measured HX-PES (Si 1s) of ultra low energy ion implantation (I/I) samples combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower binding...
Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with He plasma amorphization (He-PA) and several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized...
A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained...
Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D...
We measured HX-PES (Si 1s) of low energy ion implanted silicon substrate before and after spike RTA, and compared it with that of plasma doped (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. After spike RTA, PD sample showed superior impurity activation than that of I/I sample. Both I/I sample and PD sample showed...
Ultra-shallow P+/N junctions were formed by boron doping using plasma doping method combined with activation annealing using spike-RTA, flash lamp annealing or laser annealing. The junctions formed with flash lamp annealing or laser annealing were promising and superior to those formed by conventional low energy ion implantation method from the viewpoints of shallowness, abruptness and low sheet resistance...
We took HX-PES measurement (Si 1s) on silicon samples doped by plasma doping (PD) for the first time before and after annealing using either spike RTA or flash lamp anneal (FLA) in SPring-8. After PD, the carrier density of n-Si substrate decreased to intrinsic Si level due to defect induced carrier traps. After annealing, the results revealed that the chemical binding states of the doped samples...
Plasma doping technology has been expected to be an alternative method to beam line low energy ion implantation. First application will be shallow junction formation and doping for 3D structures. In this report, we tried to confirm the characterization methods for shallow junction, i.e., SIMS profiling for plasma doped layers shallower than 10 nm. This SIMS measurement method includes determining...
In this work, combination of the plasma doping method with flush lamp annealing (FLA) or solid-state laser annealing (ASLA) is shown to be very promising technique to form ultra-shallow and low-resistive junctions for future nano CMOS. Amorphisation by He plasma (He-PA process) is shown to be effective for obtaining shallow junction depth (Xj) and low sheet resistance (Rs). The He-PA process is found...
Authors summarize and update the status of plasma doping (PD) using He plasma amorphous (PA) technology and spectroscopic ellipsometry (SE). Authors also recommend PD as the best alternative method for ultra shallow junction formation at the 45 nm technology node and beyond. The latest annealing methods of laser annealing (LA) and flash lamp annealing (FLA) were combined with PD. Conventional spike...
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