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An experimental study was conducted for forming high quality ohmic contacts to graphene. Metal contacts of platinum/gold (Pt/Au), nickel/gold (Ni/Au), palladium (Pd), Ni, and Au to monolayer chemical vapor deposited graphene were studied. The experimental data reveal that pure Au and Ni/Au provide highly reproducible low resistance ohmic contacts. The results presented in this work indicate potential...
We report a systematic study of the contact resistance present at the interface between palladium (Pd) and monolayer graphene measured at different conditions. Measurements in vaccum appear to increase the contact resistance. However, this is attributed to a shift of the charge neutrality point due to a reduction of random molecular doping and/or humidity. Post-processing rapid thermal annealing (RTA)...
We have successfully demonstrated top-gate a-Si TFT with self-aligned nickel silicide source/drsain (S/D). We have shown, by examining contact resistance, the dominant electron injection mechanism is tunneling from silicide S/D to the channel. Further, we show that the contact resistance has no influence on device threshold and little effect on effective mobility down to L=5 mum.
Thin-film transistors (TFTs) of nanocrystalline silicon (nc-Si:H) made by plasma-enhanced chemical vapor deposition have higher electron and hole field-effect mobilities than their amorphous counterparts. However, as the intrinsic carrier mobilities are raised, the effective carrier mobilities easily can become limited by the source/drain contact resistance. To evaluate the contact resistance, the...
In this paper, we have shown that in a-Si TFT's the apparent threshold voltage extracted by conventional methods is lowered by the presence of the source/drain contact resistance, especially at short channel lengths and the analytical model presented to explain this effect is in good agreement with the experimental data. This model is particularly useful for AMOLED applications where the contact resistance...
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