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An accurate method for extracting the depth and the energy level of an oxide trap from random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of a metal-oxide-semiconductor field-effect transistor (MOSFET) is developed, which correctly accounts for variation in surface potential and Coulomb energy. The technique employs trap capture and emission times defined from the characteristics...
Our recent works concerning the electrical instability and low frequency noise (LFN) behaviors of a-IGZO TFTs are reviewed and significant results are reported. The experimental and modeling study of bias-stress-induced threshold voltage instabilities shows that the threshold voltage shift is mainly attributed to the electron injection from the channel into interface/dielectric traps in a-IGZO TFTs...
For the first time, we have analyzed low frequency noise (1/f) of p-type silicon nanowire transistors (SNWT), and investigated its bias dependency. The results were compared with those in n-type silicon nanowire transistors as well as planar MOSFETs.
This work helps to predict the output noise voltage of the CMOS image sensor read out circuit based on analytic equation and noise measurement results. With this result, the relative portion of the low frequency noise and thermal noise was calculated. As a result, this work can give an idea for reducing noise voltage magnitude of the readout circuit.
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