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Self-heating effects (SHEs) were studied on the vertical nanoplate-shaped gate-all-around (GAA) FETs (vNPFETs) as a target of 5nm node technology. The thermal properties are compared between face-up and face-down configuration. Decreasing the channel width is vulnerable to both configurations in terms of SHEs due to the reduced area of heat dissipation. It is well known that the SHE is alleviated...
Accurate evaluation of Self Heating Effects in highly down-scaled devices becomes essential for improved performance and reliability. However, complex structure of BEOL causes analysis of SHEs to be difficult To remove the difficulty, based on Rent's rule to obtain interconnect density function, effective thermal conductivity of BEOL versus metal volume density and average aspect ratio (p) was calculated...
While a tunneling field-effect transistor (TFET) is an attractive candidate for sub-20 nm ultra-low-power device, high ION/IOFF and on-current are rarely reported with the deep-submicron structures. In this study, we propose a practical novel TFET structure with vertical channel and Ge junction, which shows high current ratio, low subthreshold swing and relatively high current even when the minimum...
In this work, we propose high-density 3-D stacked NAND flash memory structure which has crystalline body stacks. We found the cross-talk between adjacent bodies in a body stack could be a severe problem for the first time. We analyzed the cross-talk and proposed a method to suppress the cross-talk. Key characteristics of proposed structure are investigated by using 3-D TCAD simulation tool.
In this work, the reasons for the abnormal corner effect, its impact on the saddle MOSFET device characteristics, and possible approaches to suppress it are examined through simulation. Effectively suppressing the abnormal corner effects is important for application in sub-50 nm high density high performance DRAM cell transistor.
The polysilicon depletion effect is one of the key factors that degrade MOSFETs' performance. In this letter, a polysilicon depletion model for recessed-channel (RC) MOSFETs is presented. The model shows good agreement with numerical device simulation results. We also compare the polysilicon depletion effect of RC MOSFETs to that of planar MOSFETs.
A capacitor-less one-transistor DRAM cell with surrounding gate MOSFET with vertical channel (SGVC) using gate-induced drain leakage (GIDL) current for write operation was demonstrated. Compared with the conventional write operation with impact ionization current, the write operation with GIDL current provides high sensing margin owing to higher potential barrier between body and source. To confirm...
In this paper, an experimental investigation on high temperature carrier mobility in MOSFETs is carried out with the aim of improving our understanding of carrier transport. The effective mobility is sensitive to the values of the effective channel length (Leff) and source/drain resistance (RSD). Therefore the extraction of Leff and RSD was performed in extracting carrier mobility at high temperature.
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