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We investigated the impact of sputtering power of source/drain metal on the characteristics of a-IGZO TFTs fabricated using back-channel-etch (BCE) process. With the increase of sputtering power, the subthreshold swing of TFTs tends to deteriorate. From the analysis of atomic force microscope (AFM), it is shown that the surface roughness of the back-channel interface increases with the sputtering...
Aqueous ammonia is used as the new additive to the H2O2-based etchant for back-channel-etch (BCE) amorphous Indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) to pattern Mo source/drain. The Mo residue after being etched by H2O2:NH3·H2O is removed completely by adjusting the PH value to above 7. The BCE a-IGZO TFTs fabricated with the new solution exhibit excellent performances with the...
We propose a self-aligned top-gate amorphous InGaZnO thin film transistor (a-IGZO TFT) with source/drain treated by N2 plasma. By comparing the performances of the self-aligned top-gate a-IGZO TFTs with N2 and Ar plasma treatment, it is found that N2 plasma treatment can effectively decrease the resistivity of the a-IGZO. The TFTs with N2 plasma treated source/drain have the comparable electrical...
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