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Ni bottom contacts and Al top gate organic field effect transistors of Poly 3-hexylthiophene and cross-linked Poly Vinyl Alcohol with different channel lengths (5 μm, 10 μm, 20 μm and 40 μm) were made on glass substrates, using standard photolithography and oxygen plasma etching. The transistors presented good charge mobility, high ION/IOFF and excellent environmental and temporal stability. The Shockley...
Photolithographic and plasma etching techniques were used to fabricate top gate-bottom contacts Organic Field Effect Transistors. The steps of the technology are shown, for transistors with Poly 3-hexylthiophene as organic semiconductor and cross linked Poly Vinyl Alcohol as gate insulator. Devices with low operational voltage, high mobility and high ION=IOFF ratios with very good reproducibility...
Ion Sensitive Field Effect Transistors (ISFETs) revolutionized pH and chemical sensing technology with its small size and compatibility with high integrated fabrication technologies. We have developed a methodology to fabricate and characterize ISFET probes for pH measurement at UFRGS Microelectronics Laboratory. NMOS depletion mode devices with a silicon dioxide sensing layer were fully fabricated...
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