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The drive current under the higher doping energy in threshold voltage (VT) adjustment shows the higher performance. Simultaneously, this consequence in VT shift under heating effect also reflects the same trend. The deviation ratios at 20KeV and 15KeV doping energies are about 26% and 28%, respectively. The subthreshold swing (S.S.) at higher doping energy is slightly lower than that at higher one...
Channels of FinFET are 3 dimensional fin-like structures which are thin enough to be fully depleted as the gate is appropriately biased leaving no leaky neutrally-charged leaky body. Different widths (fin thickness), different gate materials, and the Vt-adjustment using different implant energies are taken into account in this paper. It is then found that different fin thicknesses do affect the electrical...
The 3-D structural fin-like channels of FinFET suppress the leakage current as the sizes of devices get substantially shrunk. In this study, the fin-thickness effects on the electrical performances are mainly observed. Two different kinds of thickness (namely, 110nm, and 120nm) with the same channel length (0.1 micron) are put into comparison. The phosphorus implants of the same dose with different...
The leakage current is suppressed on 3-D structural fin-like channels of FinFET as the sizes of devices get substantially shrunk. The devices with channel width/length (0.12μm/ 0.10μm) are focused on and the baseline device is taken to be 15KeV phosphorous ions (the precursor PH3) for N-well Vt implant and heavily doped poly-silicon for the gate. One is thus intrigued in what if the Vt implant energy...
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