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The selection of the gate dielectric is one of the most critical stability issues in recessed gate AlGaN/GaN transistors. In this work, we show that the quality of the gate dielectric has a strong impact on: 1) the threshold voltage (VTH) hysteresis, 2) the drain current reduction for enhancement mode devices, and 3) the forward gate bias TDDB (time dependent dielectric breakdown). It will be shown...
This paper reports a comprehensive time dependent dielectric breakdown (TDDB) evaluation of recessed-gate devices with five different AlGaN barrier thicknesses with characteristics ranging from a D-mode MIS-HEMT to an E-mode MIS-FET. First, the fitted parameter β (the slope of the Weibull distribution) was smaller for a deeper recessed gate and larger for a thicker gate dielectric. Secondly, the extrapolated...
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