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Technological results about low temperature epitaxial deposition of GaN layers on LTCC substrates are reported. Epitaxial growths of GaN layers have been performed on commercially available LTCC substrates at 540 °C. Pre-growth preparations of the LTCC substrates has been carried out by aluminum oxide buffering layers on the LTCC surface. Further depositions have been performed in an epitaxial reactor...
The paper presents the results of studies of thermal characteristics of nanoporous anodic alumina layer formed in sulphuric acid. One-sided heating of aluminum boards by heating element from carbon filament was used. The temperature of the back side of the board was kept constant by using an aluminum heatsink. Thermograms of aluminum board surface were taken by thermal imaging camera MobIR M4.
The results of the investigation of the efficiency of the heat dissipation from the circuit board made of aluminum with the nanoporous alumina layer and conducting copper layer. In the construction of these circuit boards nanoporous alumina was used as insulator, which provided heat transfer from topology elements to the aluminum substrate. The conducting copper layer was formed by electroplating...
Within the work presented the effect of voltage, electrolyte nature and time of anodization on breakdown voltage of nanoporous aluminium oxide layers are investigated. The dielectric layers formed under various conditions feature a pore diameter from 20 to 90nm, and the thickness lies within 1÷14µm. The results reveal that reanodization up to 300V significantly enhances the breakdown voltage. For...
The work presents experimental results on silver cementation from spent photographic fixer thiosulphate solutions by iron in magnetically controlled particle beds. Axial magnetic field created by Helmholtz pair was used. The increase in the fluid flow rate yields an increased silver recovery due to reduction in the external mass transfer resistance irrespective of the particle bed structures used...
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