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We have evaluated magnetoresistance (MR)effect of a Ga-Sn-O (GTO) film deposited using mist chemical vapor deposition (CVD). It is found that the as-deposited film shows negative MR effect, whereas the annealed film shows positive MR effect. We assume that this phenomenon occurs because the carrier transportation shifts from the Anderson localization to band transportation as the film structure changes...
We are researching Ga-Sn-O (GTO) thin film as a potential material for future semiconductor devices. In this study, we investigate the GTO thin film using Hall measurement. A GTO film is deposited using RF magnetron sputtering, and annealed using electric-furnace annealing in air at temperature of 350 °C. We utilize van der Pauw method of the Hall measurement with slight modification, where the Hall...
We investigate MR effect of GTO thin-film devices. It is found positive and negative MR effects. Something dramatically changes in GTO thin-film devices. Moreover, it is suggested that the GTO thin-film devices with oxygen of high concentration indicate negative MR effect. This may be due to the generation of random potential and Anderson localization with oxygen. Finally, in the case of some special...
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