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Generation of particle defects in semiconductor manufacturing is inevitable, but it has to be minimized for high IC yield. There are various causes for the generation of particle defects, depending upon semiconductor manufacturing processes. This work discusses various strategies, such as clean on go, idle paste, kit hardware selection that help to reduce the generation of defects in metal thin films...
Generation of particle defects in semiconductor manufacturing is inevitable, but it has to be minimized for high IC yield. There are various causes for the generation of particle defects, depending upon semiconductor manufacturing processes. This work discusses various strategies, such as clean on go, idle paste, kit hardware selection that help to reduce the generation of defects in metal thin films...
The BEOL Barrier-Seed deposition process is a key component in achieving the desired electrical and electro-migration performance while balancing the step coverage. The process also has a multifold impact on wafer yield parametric since it serves multiple passes for the various metal levels. Two major challenges with the barrier sputter deposition are: (A) achieving optimal within-feature barrier...
As dimension of middle-of-line contacts scale down, the Tungsten (W) gap-fill capability is critical, and we starts to see function failure in SRAM and logic circuit caused by W-voids. We had observed that formation of W-voids is related to the contact profile, nucleation/barrier on sidewall, and deposition methods. Furthermore, even those initially "good" W-plugs are formed, the subsequent...
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