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This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with...
Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained by standard SAB, the bonding interface obtained by modified SAB with a Si-containing Ar ion beam is >30% stronger, which should be due to the in situ...
A 700-V class Reverse-Blocking IGBT (RB-IGBT) is developed for large capacity power supply applications inevitably accompanied with increasing parasitic inductance and high current slew rate relative to their medium capacity counterparts. Compared with 600-V RB-IGBT, the device allows high dynamic surge voltage and fast switching to reduce turn-off loss by 35% under an advanced T-type-NPC three level...
SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral...
3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and...
3-inch 4H-SiC wafer direct bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region...
This paper describes the impacts on performance improvement in power conversion systems with newly developed T-type 3-level IGBT module, in which authentic Reverse Blocking IGBT (RB-IGBT) are implemented. The latest generation IGBT-FWD chipsets are installed as main switches and anti-paralleled RB-IGBTs work as AC-bidirectional switch. The simplest combination in semiconductor chipset makes it possible...
The behavior of precipitates in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si 3 N 4 crystal, having a dimension of about 2μm, were formed at the mid-depth in the wafer by annealing at a high temperature in an ambient N 2 (70%)+O 2 (30%) atmosphere. The number of precipitates detected by...
We newly developed a 1200V Reverse Blocking (RB)-IGBT used to form bi-directional switches in advanced Neutral-Point-Clamped (A-NPC) 3-Level modules. It featured a hybrid through-silicon isolation structure combining wafer front-side boron deep diffusion with back-side V-groove etching. Collector layer was implanted into the back-side and the surface of the V-grooves, and electrically connected to...
A 1200V DB (Dielectric Barrier) IGBT with new surface structure and with extreme injection enhancement effect is proposed for the first time. P-base region is confined in the thin emitter layer and is almost separated electrically from drift region by the internal buried oxide layer. The new structure is electrically equivalent to the trench gate IGBT with very narrow mesa width and very wide trench...
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