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A physical operation-based drain current model is developed for novel avalanche ISFET (A-ISFET). Mobility degradation effect has been included into the model. The avalanche breakdown effects are modeled by using a previously developed impact ionization based finite multiplication breakdown model. Comparisons are made with SPICE simulation and experimental measured results, and a very good match is...
In this paper the noise behavior of a novel Avalanche Ion Sensitive Field Effect Transistor (A-ISFET) is presented. The A-ISFET is an ion sensitive field effect transistor that can inherently deliver high sensitivity through a multiplication factor, M, similar to an avalanche photodiode, where they are used when the input signal is very weak. A physical model for both intrinsic and extrinsic noise...
In this paper a novel Avalanche Ion Sensitive Field Effect Transistor (A-ISFET) is presented and experimentally demonstrated. It is shown that a similar model for impact ionization in avalanche photodiodes is also applicable for A-ISFETs. To demonstrate the benefit of A-ISFETs, a test chip with ∼35,000 arrays of A-ISFETs is designed and fabricated using a standard 0.25μm CMOS process from TSMC. The...
The SCAN domain is a highly conserved dimerization motif that is vertebrate-specific and found near the N-terminus of C 2 H 2 zinc finger proteins (SCAN-ZFP). Although the function of most SCAN-ZFPs is unknown, some have been implicated in the transcriptional regulation of growth factors, genes involved in lipid metabolism, as well as other genes involved in cell survival and differentiation...
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