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A physical operation-based drain current model is developed for novel avalanche ISFET (A-ISFET). Mobility degradation effect has been included into the model. The avalanche breakdown effects are modeled by using a previously developed impact ionization based finite multiplication breakdown model. Comparisons are made with SPICE simulation and experimental measured results, and a very good match is...
In this paper the noise behavior of a novel Avalanche Ion Sensitive Field Effect Transistor (A-ISFET) is presented. The A-ISFET is an ion sensitive field effect transistor that can inherently deliver high sensitivity through a multiplication factor, M, similar to an avalanche photodiode, where they are used when the input signal is very weak. A physical model for both intrinsic and extrinsic noise...
In this paper we present a new sensing concept for ISFET based on pH-to-current conversion. The high sensitivity of our proposed pH-to-current ISFET is achieved by optimally biased ISFET. Analytical models for ISFET sensitivity are used to determine its optimum bias point. Based on SPICE simulations, it is shown that for a minimum size N-type ISFET (W/L=2) using TSMC's 0.25um fabrication process,...
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