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We investigate RF performances and hot carrier effects of nMOSFETs at cryogenic temperature. RF performances of HfO2 dielectric nMOSFET at 77 K are improved more than those of SiO2 dielectric nMOSFET although DC performances are improved similarly. The nMOSFET with HfO2 dielectric has 127.4 GHz fT and 75.4 GHz fmax at 77 K. In hot carrier injection measurement, gm of HfO2 nMOSFET at 77 K is degraded...
The effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related effects, device characteristics under mechanical-bending stress and stressor layers were compared. The compressive-stressor device exhibits improved initial interface quality, although slightly degraded reliability characteristics, due to an increased...
Reported herein is a comprehensive and comparative study on NMOSFETs with HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.9 nm (Tinv~1.2 nm). Digital and analog performances as well as reliability characteristics are compared in detail. It is shown that HfLaSiON has a strong relationship with the interface characteristics due to low barrier height, while HfLaON with...
Sample devices were fabricated with 2.0 nm SiO2 and 2.5-10.0 nm HfO2. Transistor transconductance and gate leakage were used to evaluate PID. BTI and dielectric breakdown were measured to study the PID effect. For both nMOSFETs and pMOSFETs, the transconductance was degraded for the different antenna structures. It was found that, even below 0.9 nm of EOT range, the plasma charging damage was observed...
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