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This paper focuses on the electrical simulation and analysis of silicon interposer. Basic interconnect elements such as TSV and RDL are simulated and verified with measurement results, electrical parameters are extracted and analyzed. Segmentation is used in long signal path modeling to improve simulation efficiency with a fine accuracy. Silicon interposer is segmented into many interconnect pieces...
In this study, a stacked SRAM module with a built-in decoder was proposed with a through-multilayer TSV integration process. The through-multilayer TSVs provided data passages for all common signals, including the address bus, data bus, power, read and write control, which were redistributed at each individual chip, while the chip select signals were connected separately to the built-in decoder. Regarding...
In this paper, a stacked SRAM chip module is presented and simulation results are demonstrated. A novel 3D integration process is presented and challenging issues are addressed. With this novel process, there's no need to do grinding/polishing of copper overburden after filling of TSV by copper electroplating. Copper microbumps will be formed directly on the active side in the filling of TSV by copper...
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