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BF2+ implant was performed on Ge1−xSnx epitaxial layers where x is 0.03 or 0.053. The implant depth for BF2+ implant into Ge1−xSnx alloys is larger as compared to the same implant into Ge. It is observed that the diffusion of B during a rapid thermal annealing (RTA) is substantially suppressed by the presence of Sn. Sheet resistance measurements show that the B atoms can be activated at 400 °C in...
is a promising source and drain (S/D) stressor material for Ge p-MOSFETs, and an S/D material in channel p-MOSFETs. In this paper, we investigate the dopant segregation (DS) effects in the stanogermanidation of (boron-doped). A study comparing the contact resistance of...
Spacer-less In0.7Ga0.3As n-MOSFETs with self-aligned Ni-InGaAs contacts formed using a direct reaction between Ni and InGaAs were demonstrated. A novel salicide-like metallization process was developed to achieve self-aligned Ni-InGaAs contacts, comprising the steps of Ni reaction with InxGa1-xAs and selective removal of excess Ni. Dopantless n-MOSFETs with metallic Ni-InGaAs source/drain (S/D) and...
In this paper, strained In0.53Ga0.47As MOSFET with SiN liner stressor was demonstrated for the first time. An advanced surface passivation (SiH4+NH3) technology was also employed for achieving good electrical characteristics. The SiN liner stressor gives rise to lateral tensile strain in the channel for significant electron mobility and drive current enhancement. High-stress SiN liner is a promising...
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