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In this paper, a novel nitrogen plasma pretreatment (NPP) has been experimentally demonstrated to improve the thermal stability of thin NiGe film. The root mean square (RMS) roughness of NiGe film pretreated by NPP technique is reduced to 0.52nm, illustrating more uniform and smooth NiGe film than that without pretreatment. The thermal stability of NiGe film is improved to at least 600°C by this technique...
In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and hence reduce the contact resistivity of n+/p junction for Ge n-MOS technology. Over 1×1020 cm−3 electrical concentration and about 1.75×10−6 ohm·cm2 contact resistivity have been achieved at P+ implantation of 10keV and 5×1014cm−2 and annealing condition of 600oC, 10seconds. The fabricated N+/P diode...
In this paper, Ge surface passivation by GeO 2 grown by N 2 O plasma oxidation is presented and experimentally demonstrated. Results show that stoichiometrically GeO 2 can be achieved by N 2 O plasma oxidation at 350 °C . The transmission electron microscope observation reveals that the GeO 2 /Ge interface is automatically...
In this paper, an interface treatment for (100) Ge using HCl cleaning with different concentration and passivation with HCl and NH4F is experimentally demonstrated. The root mean square roughness (Rms) of Ge surface is reduced from 1.95nm to 0.274nm by 36% HCl cleaning, due to the high efficiency to remove the sub-oxide on Ge surface. After the pre-cleaning process, passivation with 10% NH4F achieves...
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