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Silicon tunnel devices are important for low power-consumption and fast-switching electronics. Inter-band tunneling current is, however, limited due to the indirect-bandgap nature of Si, but low-dimensionality of the devices may bring new effects into play. In this work, we analyze two-dimensional lateral Si Esaki diodes and first observe that inter-band tunneling is still largely mediated by phonon...
We study ultrathin (2D) lateral Si Esaki tunneling diodes, and find that anomalous current peaks and humps are observed to be superimposed on the ordinary negative differential conductance (NDC). The remarkable enhancement of interband tunneling current is primarily ascribed to resonant tunneling via gap-states created by large potential fluctuation due to prominent inhomogeneity of dopant distribution...
We present first-principles calculations of electronic and transport properties of silicon (Si) nanorods with sizes smaller than the Bohr radius, doped with single phosphorus (P) or co-doped with P and B (boron). For P-doped nanorods, we found that the first conductive energy state (1st CS) remains nearly unchanged by reducing the nanorod size, resulting in an electron binding energy (Eb) practically...
In this work, we study SOI nanoscale pn junctions and find that transport characteristics are strongly affected by states of individual dopants and by quantized energy states. For pn diodes with lower doping concentration, we find that individual dopant atoms work as electron traps, inducing RTS in the diode current. On the other hand, for highly-doped pn diodes, quantization effects play critical...
In this work, we find systematic transitions of electron transport regimes by controlling the number of strongly-interacting P donors in SOI-FET nano-channels. We found that, as a function of the location and number of dopants, doped using a selective-doping technique, electron transport occurs via individual P donors (in samples with low ND), via “clusters” of a few P donors (for higher ND) and via...
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