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GaN-on-Si power switching transistors that use carbon-doped epitaxy are highly vulnerable to dynamic $\text{R}_{ON}$ dispersion, leading to reduced switching efficiency. In this paper, we identify the causes of this dispersion using substrate bias ramps to isolate the leakage paths and trapping locations in the epitaxy and simulation to identify their impact on the device characteristics. It is...
GaN power HEMTs use carbon doped buffers to deliver high breakdown voltage and off-state low leakage; however these devices are highly vulnerable to dynamic dispersion. Carbon doped GaN has its Fermi level pinned 0.9eV above the valence band and in equilibrium would be isolated from the 2DEG by a reverse biased PN junction and hence would be electrically floating. In reality leakage across that junction...
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