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The plasma activation is a promised process to improve the bonding performance for materials pretreated with the plasma. In this study, the chips studded with gold bumps flipped-bonding onto alumina substrates using the thermal compressional bonding. To improve the bonding performance of gold bumps onto copper electrodes, both gold bumps and alumina substrates were pretreated to Ar/H2 plasma at 400...
More and more attention has been paid to the heterogeneous semiconductor device based on the wafer-bonding method due to its high-quality wafer-bonded active layer. In this paper, we first theoretically study the dependence of the single-photon properties, including the single-photon detection efficiency (SPDE), dark count rate (DCR), and afterpulsing probability (AP), of the wafer-bonded Ge/Si single-photon...
The plasma surface activation was applied to the thermal-compression bonding of chips and substrates. An Ar gas was selected to perform the physical plasma treatment on the bonding surface of Au bumps and Cu electrodes. This plasma-activated technology was expected to remove the surface contaminants, and then to reduce the bonding barrier for chips and substrates assembly. The experimental results...
The plasma surface activation was applied to the thermal-compression bonding of chips and substrates. An Ar gas was selected to perform the physical plasma treatment on the bonding surface of Au bumps and Cu electrodes. This plasma-activated technology was expected to remove the surface contaminants, and then to reduce the bonding barrier for chips and substrates assembly. The experimental results...
One of the most critical reliability problems that the LED COBs are facing is the failure of wire bonding connections. The LED COBs would easily break down due to the mechanical shocks or material stress on the gold wire in conventional package roadmaps. Flip chip technologies are excellent options for solving this problem. This paper has been focused on the challenges during the design and manufacturing...
This study assesses the reliability of the high-temperature storage (HTS) test and high humidity/high temperature (HH/HT) test for an assembly of chips thermosonically bonded onto flex substrates. Environmental parameters used in the HTS and HH/HT tests were consistent with joint electron device engineering council (JEDEC) specifications. The die-shear test was applied to examine changes in die-shear...
The purpose of this study was to investigate the influence of the nickel layer on the bondability and die-shear force of chips and flex substrates they were assembled using thermosonic flip-chip process. The copper electrodes over the flex substrate that were electroplated with a 0.5Lim-thick nickel layer on the surface of copper film and the silver film was then deposited on the nickel layer to be...
To improve the bondability and bonding strength of gold bump thermosonic bonding to copper electrodes over the flex substrates, the nickel layer was deposited on the surface of copper electrodes to strengthen their stiffness. A silver layer was then deposited on the nickel layer to prevent copper electrodes from oxidizing during thermosonic (wire) bonding process. The bondability and bonding strength...
The purpose of this study is to verify the reliability of chips bonded on flex substrates using thermosonic flip-chip bonding process with a non-conductive paste (NCP). High temperature storage (HTS) test, temperature cycling test (TCT), pressure cooker test (PCT) and high temperature/high humidity (HT/HH) test were conducted to investigate the reliability of chips bonded on flex substrates. The environmental...
The goal of this work is to verify the process feasibility and to improve the bonding strength of a flip-chip-on-flex (FCOF) assembly achieved by thermosonic bonding with a nonconductive paste. Prior to flip-chip bonding, a non-conductive paste was deposited on the surface of copper electrodes over a flex substrate, and a chip with eight gold bumps was then flipped and thermosonically bonded onto...
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