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Benchmark circuit are small circuit blocks that resemble the major features of the active and passive devices for a given process technology. Such blocks are attractive for verifying the compact models delivered in process design kits as well as for demonstrating the process performance at the earliest possible time. This paper presents results of two broadband Darlington amplifier versions that were...
The state-of-the-art and π-models for the lateral non-quasi-static (NQS) effect are analyzed. The superiority of the π-model to capture the lateral NQS effect is demonstrated through small-signal simulations of both the models, implemented in Verilog-A. A hybrid model is proposed and a corresponding formulation of the base impedance is obtained. The equation gives the base impedance of the state-of-the-art...
The junction capacitance of heterojunction bipolar transistors (HBTs) is commonly modeled based on the theory of the p-n-homojunction with constant doping levels, made more flexible by the introduction of adjustable model parameters. In III–V HBTs, however, the low-doped collector is often not uniform, but contains both material and doping steps used to suppress the collector current blocking and...
Detailed formulations for DC and AC emitter current crowding are presented in view of developing an extended π-equivalent circuit (EC) model to accurately predict the lateral non-quasi-static effects in silicon germanium heterojunction bipolar transistors. Under negligible DC current crowding, the EC reduces to a simple π-model. The implementation-suitable versions of the models are also developed...
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