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Two-dimensional silicon carbide (2D-SiC) has attracted incredible research attention recently because of its wide bandgap and high exciton binding energy. Here, we focus on the effect of spin–orbit coupling (SOC) on its electronic structure through a detailed first-principles density functional theory study. The calculated electronic band structure and projected electron density of states indicate...
Here we report the impact of source/drain contact resistance on the dynamic characteristics of large area Graphene Field Effect Transistor (GFET). Although silicon has been the most widely used semiconductor in the channel of MOSFETs, it is approaching to its physical limits. On the other hand, graphene has been deeply studied as a potential alternative; however its zero band gap forbids the applicability...
This paper presents the matrix version of Non-equilibrium Green's function (NEGF) approach to model transport problems for 2D graphene conductor. Nearest neighbor tight binding model is used to find the dispersion relation and from that the tuning of band gap energy by controlling the width of graphene layer is observed. The device Hamiltonian and self-energy matrices are formed suitably to calculate...
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