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Regulating the strain of inorganic perovskites has emerged as a critical approach to control their electronic and optical properties. Here, an alternative strategy to further control the piezoelectric properties by substituting the halogen atom (I/Br) in the CsPbX3 perovskite (X = Cl, Br) structure is adopted. A series of piezoelectric materials with excellent piezoelectric coefficients (d33) are...
This document proposes a novel quad-band microstrip antenna. The proposed antenna primarily comprises of a horizontal H-shaped patch, an L-shaped open end stub, and a deformed inverted T-shaped strip with an isosceles triangular shape attached to it. The antenna resonates at four frequencies, 2.75 GHz, 3.34 GHz, 5.49 GHz and 6.65 GHz which makes it susceptible to use in WiFi, WiMAX, WLAN, Satellite...
A comparative analytical approach for performance evaluation of direct tunneling gate leakage current of ultrathin silicon MOS device has been introduced. Direct tunnel characteristics in NMOSFET with different gate dielectric material (fifth, SiCh and AI2O3) at nanoscale regime has been analyzed. The variations of direct tunneling current with gate length, gate width, oxide thickness and various...
Here we report the impact of source/drain contact resistance on the dynamic characteristics of large area Graphene Field Effect Transistor (GFET). Although silicon has been the most widely used semiconductor in the channel of MOSFETs, it is approaching to its physical limits. On the other hand, graphene has been deeply studied as a potential alternative; however its zero band gap forbids the applicability...
We theoretically explore the vacancy induced vibrational properties of graphane using the forced vibrational method. We find strong changes in the phonon density of states for vacancy-type disordered graphane, revealing the significant impacts on the electron transport properties. The phonon eigenvectors estimated for the K point in-plane transverse optical mode for the defective graphane show the...
This paper presents a detailed study of DC and RF characteristics of GFET using analytical approach. GFET shows promising performance in terms of faster saturation as well as extremely high cut-off frequency. A significant shift of the Dirac point as well as an asymmetrical ambipolar behavior is observed on the transfer curve.
This paper presents the matrix version of Non-equilibrium Green's function (NEGF) approach to model transport problems for 2D graphene conductor. Nearest neighbor tight binding model is used to find the dispersion relation and from that the tuning of band gap energy by controlling the width of graphene layer is observed. The device Hamiltonian and self-energy matrices are formed suitably to calculate...
In this paper, we propose a smart phone operated robotic system that enables the user to send command to the mobile phone attached to the robot through mobile DTMF signal. It collects sensing data, sound, images and video scenarios from the surroundings using 3G video mobile communication. The DTMF signal is processed by Arduino with the aid of a decoder IC. Thereafter, the signal is transmitted to...
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