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This article has been realized in order to show simplified design procedure on how to meet the standards for dc-dc converters, which are being constantly increased. Hence we decided to analyze several generations of power semiconductor MOSFET and diode structures. With the use of simulation we've analyzed power losses (switching losses and conduction losses) during Zero Voltage Switching commutation...
In order to meet upcoming regulations and standards for dc-dc converter's efficiency, the analysis of qualitative indicator of power transistor was investigated. FOM - figure of merit, represents a measure of semiconductor suitability for high frequency power transistor application. This article deals with the analysis of FOM of several power MOSFETs, whereby main parameters are taken into consideration...
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