The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The paper deals with FoM parameter analysis of power semiconductor system’s components. This parameter can be used as optimization tool of quality indicators for power supply systems. The main advantage of using FoM assessment technique for certain system’s components is the elimination of simulation and physical experiments for efficiency evaluation. This paper consists of description of FoM assessment...
This paper has been realized in order to show simplified design procedure on how to meet the standards for dc-dc converters, which are being constantly increased. The paper deals with improvement of qualitative parameters of LLC converter. Using evaluations methods Figure of Merit, we select optimal components suitable for high-frequency applications with high power density, where we want elevate...
Each electronic device, from any consumer or industrial sector needs power supply. This power supply must satisfy nowadays certifications and efficiency standards. One of the progressive topology shall be dual half-bridge topology. This topology is formed by two branches — lagging and leading. In this paper, the efficiency of dual half bridge converter is analyzed. For this purpose experimental prototype...
This article has been realized in order to show simplified design procedure on how to meet the standards for dc-dc converters, which are being constantly increased. Hence we decided to analyze several generations of power semiconductor MOSFET and diode structures. With the use of simulation we've analyzed power losses (switching losses and conduction losses) during Zero Voltage Switching commutation...
In order to meet upcoming regulations and standards for dc-dc converter's efficiency, the analysis of qualitative indicator of power transistor was investigated. FOM - figure of merit, represents a measure of semiconductor suitability for high frequency power transistor application. This article deals with the analysis of FOM of several power MOSFETs, whereby main parameters are taken into consideration...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.