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The current–voltage (J–V) curves of Al/TiO2/n‐Si structures present an anomalous behavior where the current becomes constant for a reverse bias higher than ≈0.65 V. Here we analyze devices fabricated by spin‐coating of an organometallic precursor and subsequent annealing in an O2 atmosphere. The details of the current saturation phenomenon are interpreted as a consequence of the formation of a depletion...
Metal-Insulator-Semiconductor Schottky diodes were fabricated on SiC, as a potential use for particle detectors. Nickel was used as Schottky and back ohmic contacts. The dielectric Al2O3 was investigated as insulating layer and deposited by Atomic Layer Deposition, with thicknesses of 1, 2 and 4 nm. Current-Voltage curves were extracted from the diodes, varying the measurement temperature (297 K–373...
Non-stoichiometric silicon nitride layers were sandwiched between indium thin oxide (transparent contact) and n type silicon substrate. These films were deposited by reactive sputtering from silicon target. The composition and thickness were extracted by Rutherford backscattering spectroscopy measurement. Photo and electroluminescence spectra have been compared and there is a considerable difference...
Schottky Barrier Height (SBH) of Metal-Insulator-Semiconductor Ni/SiC diodes were theoretically and experimentally analysed through simulation/measurements of Current-Voltage curves. The SBH increase with the temperature was studied by Thermionic Emission Model, considering an insulator layer between metal and semiconductor. A new method of simulation is described, showing that extracting the SBH...
Zinc oxide nanowires have been attracting much interest due to their potential use in electronics and optoelectonics devices. In this work, we report on the photoluminescence and electrical behavior of ZnO nanowires grown by vapor-liquid-solid method and irradiated with 1.2 MeV He+ ions at several doses. The results strongly indicates the existence of an enhanced dynamic annealing effect during the...
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