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We developed a novel 3D stacked CMOS image sensor that not only improved the leakage characteristics by changing the applied voltage to storage nodes and reduced random noise in global shutter operation by using increased capacitors but also simultaneously captured the interval image of the rolling shutter operation between global shutter operations.
Our 3D stacked CMOS image sensor (CIS) has an ideal global shutter function with 16 million pixels and 4 million micro-bump interconnections placed at a 7.6-εm pitch between two silicon substrates, achieving interconnections with very low resistance. We confirmed the reliability of our 3D stacked interconnection technology by conducting reliability tests, which included heat cycle tests and high temperature...
We developed an efficient method for evaluating the 4 million micro-bump interconnection resistances of the 3D stacked 16-Mpixel CMOS image sensor by including vertical scanning and readout circuits and extra circuits in both of two substrates for a resistance testing mode, which enables us not only to find failed bumps but also to evaluate the resistances by scanning all micro bumps. We measured...
A 16Mpixel 3D stacked CMOS image sensor with pixel level interconnections using 4,008,960 micro bumps at a 7.6μm pitch, which set no layout restriction and causes no harm to sensor characteristics, was developed to achieve both a 16Mpixel global-shutter mode with a −180dB PLS and 2Mpixel 10000fps high speed image capturing mode.
A distortion-free stacked CMOS image sensor with high density micro-bump interconnections was developed. This sensor consists of a photodiode substrate and storage node substrate and was fabricated with a wafer-on-wafer stacking technology. More than 90,000 micro-bump interconnections at a pitch of 8.6 μm per chip convey the signals. A distortion-free image was successfully obtained with the developed...
Conventional CMOS image sensors widely used in products currently on the market are mainly equipped with a rolling exposure function. This rolling exposure causes so-called “Jell-o effect” distortion when capturing a moving target. CMOS image sensors with a global-shutter function are one of the solutions to avoid this distortion. An in-pixel storage node is required to create a global-shutter CMOS...
We have investigated the THz emission from lithium ternary chalcopyrite crystals illuminated femtosecond pump laser pulses. THz emission from the coherent phonon in LiInSe2 and LiGaSe2 are observed at 2.87 and 3.45 THz respectively.
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