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This paper reports for the first time the study of radiation effects on triple gate SOI tunnel FETs. In this work, devices with 1 μm width and three different channel lengths were exposed to a 600 keV proton radiation source and their current-voltage behavior was analyzed after 1 Mrad(Si) of accumulated total dose, comparing the results obtained before and after irradiation. It was possible to notice...
In this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks 3 nm of HfO2 (with an EOT of 1 nm) or 2 nm of HfO2 (with an EOT of 0.8 nm). The use of an EOT of 0.8 nm increases the band-to-band tunneling generation and also improves the subthreshold...
In this work, a comparative study between vertical silicon GAA TFETs and silicon GAA MOSFETs was realized, focusing on relevant analog parameters, as transistor efficiency, Early voltage, intrinsic voltage gain, unity gain frequency, and the product of the transistor efficiency multiplied by the unity gain frequency. The key parameter of comparison is the inversion coefficient (IC). The analysis was...
In this work, the influence of the Ge amount at source on transistor efficiency and intrinsic voltage gain of vertical gate all around TFET is experimentally evaluated, comparing three different source compositions. The reference transistor has a source of 100% of Si, and the studied devices have 27% and 100% of Ge at the source. The increase of the Ge amount at source enhances the tunneling current,...
In this work, the impact of the diameter on vertical nanowire Tunnel FETs analog parameters is evaluated experimentally and by numerical simulation, comparing two different source compositions, one with Si and another with Si73Ge27. The SiGe source device presents a higher tunneling current when compared with the Si source device, resulting in an increase of both transconductance (gm) and output conductance...
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