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In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the...
A scalable Dual n/p-LDMOS device with interesting versus performance for voltage applications in the range of 20–120 V is identified through proper optimization. Three designs have been proposed, based on different process implementations. The physical behavior of the device is reviewed and analyzed. The current expansion induced by the bipolar conductance in the drift region...
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