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Field emission applications to date including displays have featured electrode gaps in the micron scale or even larger. Devices such as vacuum field effect transistors demand smaller gaps for improved performance and continued scaling. The present work investigates nanoscale cathode–anode distances and evaluated field emission characteristics using a single Cu emitter. The gap was systematically varied...
In this paper, an annealing method with hydrogen sulflde was employed for Sulfur-doping of graphene. Both copper and SiO2 were used as substrate in the experiment and the results showed that SiO2 was more proper for S-doping of graphene. Raman and EDS spectra indicated that sulfur atoms are doped into the graphene after annealing. By this way, graphene could be easily S-doped and the S-doping density...
In this paper, the anisotropic hydrogen etching effect on chemical vapor deposited sing-crystal graphene domains was reported. After synthesized by chemical vapor deposition on copper foils, the graphene domains were exposed to a mixed gas flow of argon and hydrogen for etching. By varying the etching temperature from 800 °C to 1050 °C, hexagonal openings inside the graphene domains were found on...
In this paper, electroplated Cu was used as substrate to grow graphene by chemical vapor deposition (CVD) with a mixture gas of methane, hydrogen and argon. The different electroplated Cu gain size after annealing was studied. We present the growth temperature, growth time and methane concentration are key parameters that affect the structural perfection of graphene.
This work presents a thermoelectric energy generator (TEG) device with a card structure which embeds a thin-film based TEG chip. The thermocouples are densely arranged between comb-shaped substrates in the chip. The chip is packaged vertically and heated/cooled by metallic plugs connected with the external heat source and heat sink. The packaged device has a footprint of 3 mm × 1.2 mm, while the height...
In this paper, a traditional chemical vapor deposition method for synthesis of single-crystal graphene domains on copper foils was optimized by modulating the growth parameters. This provided us a low-cost and high-yield method for large-area single-crystal graphene domain growth. By this way, single-crystal graphene domains larger than 10μm were synthesized with a gas flow of 1000sccm argon, 40sccm...
This paper is mainly about the numerical research for contact point temperature distribution in the condition of short circuit, overload and poor contact. The computational fluid dynamics method is used to research the feature of convective heat transfer between copper bars and air. Then the convective heat transfer coefficient is obtained from Fluent as thermal boundary condition of Ansoft for temperature...
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