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This paper reviews the main challenges for the TCAD of 14nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology performance assessment. Thanks to a multi-scale approach combining extensive electrical characterization and advanced solvers simulations, ensuring deep physical insight, we provide TCAD simulation framework for device layout optimization, strain engineering and device reliability assessment.
This paper investigates the mobility ‘apparent’ channel length dependency in nanometric devices. Based on a series of current and capacitance measurements, we report clear (VG)−1 dependencies of the access resistance in Bulk but also in FDSOI devices. We show that the μeff-Leff degradation observed at small L can be inferred from this gate-bias dependency. By means of numerical simulation, we show...
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